| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To constitute a semiconductor device so that a memory mat positioned at an end part can be handled in the same way as other memory mats, in a semiconductor device in which bit lines are made a hierarchical state. <P>SOLUTION: The semiconductor device includes: a global bit line GBL and a dummy global bit line DGBL being shorter than the bit line GBL; a sense amplifier Sa amplifying these potential difference; a plurality of memory blocks MB each including a local bit line LBL connected to the global bit line GBL through the hierarchical switch SW; a dummy memory block DMB including a dummy local bit line DLBL having the same length as LBL connected to the dummy global bit line DGBL through the dummy hierarchical switch; and a control circuit 100 activating any one of hierarchical switches SW and the dummy hierarchical switch DSW. Thus, a memory mat positioned at an end part and other memory mats can be made to have the same storage capacity. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
