发明名称 |
CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
Embodiments of the invention include a semiconductor structure comprising a Ill-nitride light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). A contact disposed on the p-type region includes a transparent conductive material (28) in direct contact with the p-type region (26), a reflective metal layer (34), and a transparent insulating material (30) disposed between the transparent conductive layer (28) and the reflective metal layer (34). In a plurality of openings (32) in the transparent insulating material (30), the transparent conductive material (28) is in direct contact with the reflective metal layer. |
申请公布号 |
WO2010150114(A3) |
申请公布日期 |
2011.02.17 |
申请号 |
WO2010IB52277 |
申请日期 |
2010.05.21 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC;KONINKLIJKE PHILIPS ELECTRONICS N.V.;EPLER, JOHN E.;DAVID, AURELIEN J.F. |
发明人 |
EPLER, JOHN E.;DAVID, AURELIEN J.F. |
分类号 |
H01L33/40;H01L33/42;H01S5/042 |
主分类号 |
H01L33/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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