发明名称 Vorrichtung zur Herstellung eines Einkristalls
摘要 <p>The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth.</p>
申请公布号 DE112008003609(T5) 申请公布日期 2011.02.17
申请号 DE20081103609T 申请日期 2008.12.18
申请人 SHIN-ETSU HANDOTAI CO. LTD. 发明人 HOSHI, RYOJI;TAKANO, KIYOTAKA
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
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