发明名称 |
Vorrichtung zur Herstellung eines Einkristalls |
摘要 |
<p>The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth.</p> |
申请公布号 |
DE112008003609(T5) |
申请公布日期 |
2011.02.17 |
申请号 |
DE20081103609T |
申请日期 |
2008.12.18 |
申请人 |
SHIN-ETSU HANDOTAI CO. LTD. |
发明人 |
HOSHI, RYOJI;TAKANO, KIYOTAKA |
分类号 |
C30B15/00;C30B29/06 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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