| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal slicing method that reduces processing damage when processing a semiconductor crystal such as, particularly, a hard-brittle Ga-containing nitride crystal. SOLUTION: A wire travels while repeating "normal rotation" and "reverse rotation". However, a wire in a state of cutting a plate-like crystal surely travels in a direction from the end of a GaN crystal toward the center thereof. In addition, a change from "normal rotation" to "reverse rotation" or a change from "reverse rotation" to "normal rotation" occurs when the traveling speed of a wire substantially becomes zero. Therefore, the wire in a state of cutting a crystal does not travel in a direction from the center of the GaN crystal toward the end thereof. Consequently, processing damage to the crystal is reduced to suppress a factor for causing cracks or the like. COPYRIGHT: (C)2011,JPO&INPIT |
