| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein, since the material of a ring is silicon, the ring is etched like a semiconductor wafer, and thereby an area to be etched is increased to degrade an etching rate. SOLUTION: This dry etching device for applying etching processing to a wafer WF by arranging the wafer WF in a processing chamber and converting an introduced reaction gas to plasma includes: an annular first ring 110 arranged in the outside to surround the wafer WF and formed of a conductive material; and an annular second ring 120 arranged in the outside to surround the first ring 110 and formed of an insulating material. COPYRIGHT: (C)2011,JPO&INPIT
|
