发明名称 PLATEN TO CONTROL CHARGE ACCUMULATION
摘要 An embossed platen to control charge accumulation includes a dielectric layer, a plurality of embossments on a surface of the dielectric layer to support a workpiece, each of a first plurality of the plurality of embossments having a conductive portion to contact a backside of the workpiece when the workpiece is in a clamped position, and a conductor to electrically couple the conductive portion of the first plurality of embossments to ground. An ion implanter having such an embossed platen is also provided.
申请公布号 US2011036990(A1) 申请公布日期 2011.02.17
申请号 US20090540225 申请日期 2009.08.12
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 STONE DALE K.;STONE LYUDMILA;BLAKE JULIAN G.;AMMON FREDERICK B.;SUURONEN DAVID E.
分类号 H05F1/00;G21G5/00;H01J27/00 主分类号 H05F1/00
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