发明名称 |
PLATEN TO CONTROL CHARGE ACCUMULATION |
摘要 |
An embossed platen to control charge accumulation includes a dielectric layer, a plurality of embossments on a surface of the dielectric layer to support a workpiece, each of a first plurality of the plurality of embossments having a conductive portion to contact a backside of the workpiece when the workpiece is in a clamped position, and a conductor to electrically couple the conductive portion of the first plurality of embossments to ground. An ion implanter having such an embossed platen is also provided.
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申请公布号 |
US2011036990(A1) |
申请公布日期 |
2011.02.17 |
申请号 |
US20090540225 |
申请日期 |
2009.08.12 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
STONE DALE K.;STONE LYUDMILA;BLAKE JULIAN G.;AMMON FREDERICK B.;SUURONEN DAVID E. |
分类号 |
H05F1/00;G21G5/00;H01J27/00 |
主分类号 |
H05F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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