| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor device, which uses a film high in hygroscopic property as a film to be buried between gate electrodes, from deteriorating in the reliability of metal wiring. SOLUTION: The semiconductor device 50 includes a plurality of gate electrodes 2 formed on a substrate 1, a first interlayer insulating film 5 covering a top of the substrate including tops of the plurality of gate electrodes 2, a second interlayer insulating film 6 covering a top of the first interlayer insulating film 5, a plurality of contact plugs 7 penetrating the first interlayer insulating film 5 and second interlayer insulating film 6 to reach a predetermined place or one of the plurality of gate electrodes 2 on the substrate 1, and a wiring formation layer 8 formed on the second interlayer insulating film 6 and including the metal wiring 9 connected to the contact plugs 7. The first interlayer insulating film 5 has a lower film 3 having a first recessed part 5a at least over one gate electrode 2 and coming into contact with the plurality of gate electrodes 2 and substrate 1, and an upper film 4 disposed on the lower film 3 except at the first recessed part 5a, and the second interlayer insulating film 6 is buried in the first recessed part 5a. COPYRIGHT: (C)2011,JPO&INPIT
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