发明名称 HIGH PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUSES, METHODS, AND COMPOSITIONS PRODUCED THEREWITH
摘要 A composition, reactor apparatus, method, and control system for growing epitaxial layers of group Ill-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.
申请公布号 WO2011019920(A1) 申请公布日期 2011.02.17
申请号 WO2010US45329 申请日期 2010.08.12
申请人 GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC.;DIETZ, NIKOLAUS 发明人 DIETZ, NIKOLAUS
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
主权项
地址