发明名称 |
HIGH PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUSES, METHODS, AND COMPOSITIONS PRODUCED THEREWITH |
摘要 |
A composition, reactor apparatus, method, and control system for growing epitaxial layers of group Ill-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers. |
申请公布号 |
WO2011019920(A1) |
申请公布日期 |
2011.02.17 |
申请号 |
WO2010US45329 |
申请日期 |
2010.08.12 |
申请人 |
GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC.;DIETZ, NIKOLAUS |
发明人 |
DIETZ, NIKOLAUS |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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