发明名称 |
MEASUREMENT METHOD FOR READING MULTI-LEVEL MEMORY CELL UTILIZING MEASUREMENT TIME DELAY AS THE CHARACTERISTIC PARAMETER FOR LEVEL DEFINITION |
摘要 |
A memory system includes a memory cell configured to represent at least two binary values, a bit line coupled to the memory cell, and first and second comparators coupled to the bit line that, respectively, compare a first and second reference value to a value of a parameter of the bit-line. The system also includes a first and second timers configured to measures a time for the parameter of the bit line to decay. The system also includes a logic unit coupled to the first and second timers that selects the time for the parameter of the bit line to decay from to a first value or a second value.
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申请公布号 |
US2011038199(A1) |
申请公布日期 |
2011.02.17 |
申请号 |
US20090542146 |
申请日期 |
2009.08.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW J.;LAM CHUNG H.;RAJENDRAN BIPIN |
分类号 |
G11C11/00;G11C7/00;G11C7/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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