SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress or prevent a kink phenomenon of a semiconductor device having a high breakdown voltage field-effect transistor. SOLUTION: In a boundary region between trench type isolation regions 3 on both sides in a gate width direction of a channel region of a high breakdown voltage pMISQHp1 and a semiconductor substrate 1S, an n+type semiconductor region NVk of a conductivity type opposite to p+type semiconductor regions P1 and P1 for a source and drain of the high breakdown voltage pMISQHp1 is arranged at a position separated from p-type semiconductor regions PV1 and PV1 so as not to come in contact with p-type semiconductor regions PV1 and PV1 (particularly, the drain side) having electric field relaxation function of the high breakdown voltage pMISQHp1. The n+type semiconductor region NVk is extended to a deeper position than the trench type isolation regions 3. COPYRIGHT: (C)2011,JPO&INPIT