| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing a micro structure of nitride semiconductor, which forms a microstructure containing a hole inside of a semiconductor without fluctuating the size of the hole formed under precision control in the etching step of the semiconductor even after applying a heat treating step. <P>SOLUTION: The method of producing the microstructure of nitride semiconductor includes a step of: preparing a semiconductor structure equipped with a narrow trench formed in a main surface of the nitride semiconductor, a heat-treating mask covering the main surface of the nitride semiconductor excluding the narrow trench; a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the narrow trench after the step of the preparing the semiconductor structure; a step of removing the heat-treating mask after the first heat-treatment step; and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the narrow trench on the sidewall where the crystallographic face is formed, with a nitride semiconductor, after the step of removing the heat-treating mask. <P>COPYRIGHT: (C)2011,JPO&INPIT |
