发明名称 |
AMMONOTHERMAL METHOD AND NITRIDE CRYSTAL |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To enlarge a homogeneous nitride crystal at a practical velocity by an ammonothermal method while using an acidic mineralizer. <P>SOLUTION: The difference between a temperature in a range for dissolving a raw material in ammonia wherein at least one of ammonium bromide and ammonium iodide is dissolved and a temperature in a range for growing a nitride crystal from ammonia wherein the raw material has been dissolved is set to be 5-70°C. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011032154(A) |
申请公布日期 |
2011.02.17 |
申请号 |
JP20100033955 |
申请日期 |
2010.02.18 |
申请人 |
MITSUBISHI CHEMICALS CORP;TOHOKU UNIV |
发明人 |
MIKAWA YUTAKA;KIYOMI MAKIKO;ISHIGURO TORU;KAGAMITANI YUJI;YOKOYAMA CHIAKI;TOMITA DAISUKE |
分类号 |
C30B29/38;C30B7/10 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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