High voltage switching devices and process for forming same

摘要

A microelectronic device structure adapted for high voltage operation is disclosed. It comprises:
(a) a first GaN layer of n-type conductivity having a top surface characterized by a dislocation defect density of not more than about 5 × 106/cm2 ;
(b) a second GaN layer having a dopant concentration of not more than about
1 × 1015/cm3, disposed adjacent to said first GaN layer;
(c) a third GaN layer of p-type conductivity, disposed adjacent to said second GaN layer; and
(d) at least one metal contact disposed adjacent to said third GaN layer.