| 摘要 |
PURPOSE:To obtain a circuit having performance characteristics of various kinds by containing an electrostatic induction FET formed by inserting a semi-insulating layer into a source electrode region or between a surce electrode and a source semiconductor region in the circuit. CONSTITUTION:An N channel longitudinal FET is formed by drain electrodes 11, an N type high impurity density region 14, an N type low impurity density region 15, gates 13, an N type low impurity density region 15 and source electrodes 12. At the source side, windows are bored to a thin-film 18 in insulating substance, and the electrodes 12 are each contacted with the film 18 and N type high impurity 17. The larger the windows are made up, the larger series resistance becomes in the source. The larger the area of the film 18 is , the thinner the thickness is, and the larger a dielectric constant of the film 18 is, the larger the value of a bypass capacitor of the resistance becomes. The value of the resistance can be controlled by forming high resistance regions 19 in the vicinity of the regions 17 as necessary. The regions 17 may be contacted with the whole surface of the film 18. |
