摘要 |
<p>A method of forming a semiconductor device module including a number of n semiconductor devices is provided, n being an integer ‰¥ 2, the method including: providing a substrate (10) coated with a first contact layer (20), having a semiconductor layer (30) formed on the first contact layer, and having a second contact layer (40) formed on the semiconductor layer; and forming a connection of the first contact layer and the second contact layer by forming a number of n-1 conductive paths (50) in a material of the semiconductor layer for connecting the n semiconductor devices.</p> |