发明名称 |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
摘要 |
A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
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申请公布号 |
US7888235(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20070831484 |
申请日期 |
2007.07.31 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
LETERTRE FABRICE;GHYSELEN BRUNO;RAYSSAC OLIVIER |
分类号 |
H01L21/30;C30B25/02;C30B25/18;H01L21/04;H01L21/18;H01L21/20;H01L21/76;H01L21/762 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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