发明名称 Fabrication of substrates with a useful layer of monocrystalline semiconductor material
摘要 A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
申请公布号 US7888235(B2) 申请公布日期 2011.02.15
申请号 US20070831484 申请日期 2007.07.31
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LETERTRE FABRICE;GHYSELEN BRUNO;RAYSSAC OLIVIER
分类号 H01L21/30;C30B25/02;C30B25/18;H01L21/04;H01L21/18;H01L21/20;H01L21/76;H01L21/762 主分类号 H01L21/30
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