发明名称 ORGANIC DIELECTRIC COMPOSITION, AND ORGANIC THIN LAYER TRANSISTOR COMPRISING SAME
摘要 <p>PURPOSE: An organic insulation film composition for forming a gate insulation layer and an organic thin film transistor using the same are provided to improve the property of the organic thin film transistor by reducing hysteresis when driving the organic thin film transistor. CONSTITUTION: An organic insulation film composition includes novolak resin, cross-linking agents and solvents. The novolak resin is made by step polymerization. The organic insulation film composition is coated on a base substrate and is thermally processed after soft bake. An organic thin film transistor includes a gate insulation layer(3), an organic semiconductor layer(6), and an electrode layer.</p>
申请公布号 KR20110015257(A) 申请公布日期 2011.02.15
申请号 KR20090072890 申请日期 2009.08.07
申请人 DONGJIN SEMICHEM CO., LTD.;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 LEE, HO JIN;KIM, BYUNG UK;KIM, WE YONG;HONG, MOON PYO;KIM, DOO HYUN
分类号 H01L29/786;H01B3/30 主分类号 H01L29/786
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