发明名称 Bonding pad structure and manufacturing method thereof
摘要 A bonding pad structure of a semiconductor device and a method of manufacturing the same reduce the likelihood of peel-off defects from occurring. The bonding pad structure includes a substrate, an interlayer insulation layer on the substrate, an upper wiring layer on the interlayer insulation layer, and a plurality of lower wiring layers disposed in the interlayer insulation layer between the upper wiring layer and the substrate and configured to prevent the interlayer insulation layer from cracking especially during a wire bonding process in which a wire is bonded to the upper wiring layer. For example, the respective areas occupied by the lower wiring layers sequentially increase in the interlayer insulation layer in a downward direction from the upper wiring layer towards the substrate. Also, each of the lower wiring layers may project further inwardly toward a central part of the bonding pad than the lower layer of wiring disposed above it in the interlayer insulation layer.
申请公布号 US7888802(B2) 申请公布日期 2011.02.15
申请号 US20090608018 申请日期 2009.10.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KYOUNG-HWAN
分类号 H01L23/488 主分类号 H01L23/488
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