| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the property deterioration of a semiconductor device due to the oxidation of a diffusion preventing film by forming an oxidation preventing film which surrounds the sidewall of the diffusion preventing film. CONSTITUTION: A first conductive film(20) is formed. A diffusion preventing film(21A) is formed on the first conductive film. The sidewall of the diffusion preventing film is partially etched. An oxidation preventing film(23) surrounding the diffusion preventing film is formed in the etched region. A second conductive film is formed on the diffusion preventing film and the oxidation preventing film.
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