发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.
申请公布号 KR20110015007(A) 申请公布日期 2011.02.14
申请号 KR20107027554 申请日期 2009.04.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OIKAWA YOSHIAKI;EGUCHI SHINGO;YAMAZAKI SHUNPEI
分类号 H01L21/312 主分类号 H01L21/312
代理机构 代理人
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