| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves an increase of a driving current by expanding a channel region, and to provide a method of manufacturing the same. SOLUTION: A semiconductor device comprises an active region 5 insulated and separated by an embedded insulating film 3 embedded in a semiconductor substrate 2, a gate electrode 7 formed over the active region 5 via a gate insulating film 6 formed on the active region 5, a source region 8 and a drain region 9 formed by implementing ions into the active region 5 at both sides with the gate electrode 7 therebetween. In the active region 5, a groove 10 is provided. A trench-type channel structure is included by embedding part of the gate electrode 7 inside the groove 10 via the gate insulating film 6. Recesses 11 are provided in counter to both side surfaces of the active region 5 and by forming a narrow part 12 between these recesses 11, a channel region 13 wider than the narrow part 12 is formed at least between a bottom of the groove 10 and the narrow part 12. COPYRIGHT: (C)2011,JPO&INPIT
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