发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To excellently connect plugs which are stacked to each other. SOLUTION: A method for manufacturing a semiconductor device includes: forming a first interlayer insulating film on a semiconductor substrate; forming a first hole in the first interlayer insulating film; forming a barrier film inside the first hole; filling a conductive material in the first hole to form a first plug; forming a second interlayer insulating film on the first interlayer insulating film; forming a second hole reaching the first plug in the second interlayer insulating film; selectively etching the upper end of the barrier film inside the second hole; and forming a second plug for connection to the first plug inside the second hole. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011029327(A) 申请公布日期 2011.02.10
申请号 JP20090172225 申请日期 2009.07.23
申请人 ELPIDA MEMORY INC 发明人 IZAWA MITSUTAKA
分类号 H01L21/768;H01L21/8242;H01L27/108 主分类号 H01L21/768
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