发明名称 |
PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION |
摘要 |
A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation. |
申请公布号 |
US2011033799(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20100850266 |
申请日期 |
2010.08.04 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
WATANABE TAKERU;NISHI TSUNEHIRO;IIO MASASHI |
分类号 |
G03F7/20;C08F20/04;C08F20/10;C08F24/00;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|