POWER SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor element having a superjunction structure formed by embedding a trench groove and improving a breakdown voltage of a terminal part and to provide a manufacturing method of the power semiconductor element.

SOLUTION: In the power semiconductor element, p-type pillars 3 in which the trench groove formed with periodicity in a lateral direction is embedded and n-type pillars 4 being parts of n-type drift layers sandwiched between the adjacent p-type pillars 3, and p-type regions 5 communicating with p-type pillars 3b and disposed below the p-type pillars 3b at the terminal part are arranged in an n-type drift layer 2 installed on a main face of an n+drain layer 9 in an element part where a main current path is formed in a vertical direction perpendicular to the main face of the n+drain layer 9 and in the terminal part arranged around the element part.

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