| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ferroelectric thin film that has larger residual polarization (111) than PZT with an excellent orientation in a ferroelectric capacitor and a ferroelectric memory device. SOLUTION: A ferroelectric film with a preferred orientation (111) is formed by adding, to tetragonal Pb(Zr<SB>x</SB>Ti<SB>1-x</SB>)O3, a material having a tetragonal perovskite structure with a larger c axis/a axis ratio than tetragonal Pb(Zr<SB>x</SB>Ti<SB>1-x</SB>)O3. Furthermore, an upper electrode and a lower electrode are provided so as to sandwich the ferroelectric film. COPYRIGHT: (C)2011,JPO&INPIT
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