摘要 |
<p>The array has multiple pixels (1) e.g. photonic mixer device pixels, formed from radiation-sensitive material, where each pixel has a storage region for receiving electrical charges. A linearization circuit (20) is associated to one of the pixels. The storage region is connected with a gate of a non-linear transistor (M1A) e.g. FET. The linearization circuit is connected to an outlet of the non-linear transistor using selection transistors (M2A, M2A', M2B, M4A) for compensating non-linearity between a charging quantity at the storage region and an output signal of the non-linear transistor. An independent claim is also included for a method for measuring and amplifying charge quantity in a storage region of a pixel of a pixel array.</p> |