METHOD FOR MANUFACTURING SOI SUBSTRATE, AND SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that improves the manufacturing yield by suppressing generation of surface roughness of a semiconductor layer (for example, a single-crystal silicon layer) when an SOI substrate is manufactured by bonding a base substrate (for example, a glass substrate) and a bond substrate (for example, a single-crystal silicon substrate) to each other. SOLUTION: The bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate. COPYRIGHT: (C)2011,JPO&INPIT