| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents and remarkably delays ion migration even if a distance between wirings decreases. <P>SOLUTION: The semiconductor device 10 has: a re-wiring layer 12 in which one end 12a is electrically conducted to an electrode 11c of a semiconductor substrate 11 and a land portion 13 is provided on the other end; an insulating resin post portion 14 formed in a lower surface 13b of the land portion 13 at a space to one main surface 11a of the semiconductor substrate 11; and a sealing insulating film 15 formed so as to cover the one main surface 11a and to expose at least part of the land portion 13. In the semiconductor device 10, the re-wiring layer 12 has a wiring portion 12b extending in parallel to the one main surface 11a with a predetermined distance from the one main surface 11a, the land portion 13 has a diameter larger than the width w of the wiring portion 12b, and the wiring portion 12b is overall covered with the same sealing insulating film made of a continuous body entirely in a cross section vertical to the longitudinal direction thereof. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
