| 摘要 |
PURPOSE: A P-GAN treatment using an electron beam is provided to discharge hydrogen particle disassembled from an Mg-H composite by using a lower heating source and an electronic beam. CONSTITUTION: The acceleration energy of an electronic beam(40) is set according to the thickness of a p-type gallium nitride film(20) on an electroluminescence element. The electronics(10) outputted from the electronic beam are penetrated into a p-type gallium nitride film to be combined with the hydrogen particles of a Mg-H composite. A heating source(50) and the electronic beam are used to discharge hydrogen particle which is disassembled from the Mg-H composite. The electronics having a fixed energy is implanted and are combined with the hydrogen particle in the Mg-H composite.
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