| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device suitable for a vehicle radar, the high frequency filter of which is manufactured at low cost and provided with high robustness for filter performance to an external environment, such as temperature fluctuations. <P>SOLUTION: A filter cover 30 that is inside provided with a metal-plated resin periodic structure (32) which cuts off (transmission controls) an operation frequency covers a circuit board 20 mounted with a high-frequency circuit 10. In a radar housing 60 provided with antennas 21 and 22, (1) a reinforced part 33 that has a heat expansion coefficient which is almost the same as that of the circuit board 20 is provided on the cover 30 provided with the periodic structure 32 opposing to the high-frequency circuit 10, or (2) between adjacent cavities 81 and 82 which have a transmission controller (32 or the like), a communication hole that has a height H and a width W(≤λ/4) to cut off an operation frequency is provided. Therefore, filter fluctuations are prevented, and a high-frequency semiconductor device that has high robustness to environmental changes can be acquired. <P>COPYRIGHT: (C)2008,JPO&INPIT |
