发明名称 Redundant memory array for replacing memory sections of main memory
摘要 Memories and methods for replacing memory sections of a main memory array by mapping memory addresses for an entire main memory section to at least one memory section of a redundant memory array. One such memory includes a fuse block having programmable elements configured to be programmed to identify main memory sections to be mapped to redundant memory sections of the redundant memory array. The memory further includes a redundant memory logic circuit coupled to the redundant memory array and the fuse block. The redundant memory logic is configured to map the memory for a main memory section identified in the fuse block to at least one of the redundant memory sections of the redundant memory array.
申请公布号 US7885128(B2) 申请公布日期 2011.02.08
申请号 US20080255523 申请日期 2008.10.21
申请人 MICRON TECHNOLOGY, INC. 发明人 FUJIWARA YOSHINORI
分类号 G11C29/00 主分类号 G11C29/00
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