发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<p>A plasma processing apparatus (101) is provided with: a chamber, which includes side walls (12) and a top plate (11); a stage (14) for disposing a subject to be processed (13) in the chamber; a plurality of main electrodes (15), each of which includes two main electrode first portions that penetrate the top plate (11), and a main electrode second portion that connects together, on the side lower than the lower surface of the top plate (11), the lower ends of the main electrode first portions; and a plurality of auxiliary electrodes (16), each of which is disposed close to each of the side walls (12) and outside of the top plate (11) region wherein the main electrodes (15) are arranged, and which includes two auxiliary electrode first portions that penetrate the top plate (11), and an auxiliary electrode second portion that connects together the lower ends of the auxiliary electrode first portions.</p> |
申请公布号 |
WO2011013459(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
WO2010JP60198 |
申请日期 |
2010.06.16 |
申请人 |
SHARP KABUSHIKI KAISHA;NISSIN ELECTRIC CO., LTD.;YOSHIDA, TOKUO;MORIGUCHI, MASAO;HOSHINO, ATSUYUKI;TAKAHASHI, EIJI |
发明人 |
YOSHIDA, TOKUO;MORIGUCHI, MASAO;HOSHINO, ATSUYUKI;TAKAHASHI, EIJI |
分类号 |
C23C16/505;H01L21/205;H05H1/46 |
主分类号 |
C23C16/505 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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