发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>A plasma processing apparatus (101) is provided with: a chamber, which includes side walls (12) and a top plate (11); a stage (14) for disposing a subject to be processed (13) in the chamber; a plurality of main electrodes (15), each of which includes two main electrode first portions that penetrate the top plate (11), and a main electrode second portion that connects together, on the side lower than the lower surface of the top plate (11), the lower ends of the main electrode first portions; and a plurality of auxiliary electrodes (16), each of which is disposed close to each of the side walls (12) and outside of the top plate (11) region wherein the main electrodes (15) are arranged, and which includes two auxiliary electrode first portions that penetrate the top plate (11), and an auxiliary electrode second portion that connects together the lower ends of the auxiliary electrode first portions.</p>
申请公布号 WO2011013459(A1) 申请公布日期 2011.02.03
申请号 WO2010JP60198 申请日期 2010.06.16
申请人 SHARP KABUSHIKI KAISHA;NISSIN ELECTRIC CO., LTD.;YOSHIDA, TOKUO;MORIGUCHI, MASAO;HOSHINO, ATSUYUKI;TAKAHASHI, EIJI 发明人 YOSHIDA, TOKUO;MORIGUCHI, MASAO;HOSHINO, ATSUYUKI;TAKAHASHI, EIJI
分类号 C23C16/505;H01L21/205;H05H1/46 主分类号 C23C16/505
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