Silizium-Einkristall-Wafer, Verfahren zur Herstellung eines Silizium-Einkristalls oder Verfahren zur Herstellung eines Silizium-Einkristall-Wafers, und Halbleiterbauelement,申请号DE200911000569T-传众专利搜索

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发明名称	Silizium-Einkristall-Wafer, Verfahren zur Herstellung eines Silizium-Einkristalls oder Verfahren zur Herstellung eines Silizium-Einkristall-Wafers, und Halbleiterbauelement
摘要
申请公布号	DE112009000569(T5)	申请公布日期	2011.02.03
申请号	DE200911000569T	申请日期	2009.02.19
申请人	SHIN-ETSU HANDOTAI CO. LTD.	发明人	EBARA, KOJI;IGAWA, SHIZUO;OKA, TETSUYA
分类号	C30B29/06;C30B33/02	主分类号	C30B29/06
代理机构		代理人
主权项
地址

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