| 摘要 |
<P>PROBLEM TO BE SOLVED: To eliminate the influence of variation by simple and high-speed control even when the resistance value of a variable resistance element varies significantly during manufacturing or during use. <P>SOLUTION: When a drive circuit drives a bit line BL1 while a sensor line SL1 is grounded via an SL drive transistor SLDT, resistance in a tunnel magnetic resistance element TMR changes. The drive circuit comprises a first drive transistor DT1 and a reference circuit 6R. In the reference circuit 6R, a resistance element part 60 formed by imitating the tunnel magnetic resistance element TMR is provided and is current-driven to control the occurrent of a reference voltage Vref with which the first drive transistor DT1 is controlled. Accordingly, as compared with when applying a constant voltage VW to a node ND1 for driving, the influences of TRM change and the other cell current path transistor are eliminated. <P>COPYRIGHT: (C)2011,JPO&INPIT |
