发明名称 Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
摘要 In a method for making a full-spectrum solar cell, there is provided an ordinary solar cell with an anti-reflection layer. The anti-reflection layer is coated with a film of silicon nitride and/or silicon oxide. The silicon/nitrogen ratio and/or the silicon/oxygen ratio and the temperature are regulated, thus forming a silicon-rich film via doping the anti-reflection layer with silicon from the film of silicon nitride and/or silicon oxide. The precipitation of the silicon in the silicon-rich film is executed based on a mechanism of phase separation, thus forming silicon quantum dots of various sizes in the anti-reflection layer.
申请公布号 US2011027935(A1) 申请公布日期 2011.02.03
申请号 US20080076254 申请日期 2008.03.14
申请人 ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH 发明人 YANG TSUN-NENG
分类号 H01L31/18 主分类号 H01L31/18
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