| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device increasing the pressure resistance of a backward diode, and also to provide a method of manufacturing the same. SOLUTION: The compound semiconductor device is equipped with: an Sb including p-type compound semiconductor layer 101; and an InP containing n-type compound semiconductor layer 102 joined to the p-type compound semiconductor layer 101. COPYRIGHT: (C)2011,JPO&INPIT |
