COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY

摘要

Disclosed is a composition for forming a resist underlayer film that is used as an underlayer for a resist for nanoimprint lithography in nanoimprint lithography in a pattern forming process. The resist underlayer film is formed by curing the composition by firing and/or irradiation of light. Specifically disclosed is a composition for forming a resist underlayer film for nanoimprint lithography, which contains (A) a polymerizable compound containing a silicon atom, (B) a polymerization initiator and (C) a solvent, said resist underlayer film being used for nanoimprint lithography in a pattern forming process using nanoimprint lithography and being formed from the composition by firing and/or irradiation of light. The polymerizable compound (A) contains 5-45% by mass of silicon atoms, and is composed of a polymerizable compound having at least one cationically polymerizable reactive group, a polymerizable compound having at least one radically polymerizable reactive group or a combination of the polymerizable compounds. The polymerization initiator (B) is composed of a photopolymerization initiator.