| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for producing a monocrystalline thin film wherein lift-off of a monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film for a solar cell can be obtained, and to provide a monocrystalline thin film device obtained by the process. <P>SOLUTION: A monocrystalline silicon substrate 71 is prepared, a monocrystalline silicon sacrificial layer 72 composed of the same substance as that of the substrate 71 and including crystalline defects is formed on the monocrystalline silicon substrate 71, a monocrystalline silicon thin film 73 composed of the same substance and having crystalline defects less than that of the monocrystalline silicon sacrificial layer 72 is formed on the monocrystalline silicon sacrificial layer 72, and the monocrystalline silicon sacrificial layer 72 is dissolved to manufacture the monocrystalline silicon thin film 73 wherein crystalline defects are reduced. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
