发明名称 |
DRIVER CIRCUIT FOR GALLIUM NITRIDE (GaN) HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFETs) |
摘要 |
A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
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申请公布号 |
US2011025397(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20100690495 |
申请日期 |
2010.01.20 |
申请人 |
UNIVERSITY OF SOUTH CAROLINA |
发明人 |
WANG BO;MONTI ANTONELLO;BAKOS JASON;RIVA MARCO |
分类号 |
H03L5/00 |
主分类号 |
H03L5/00 |
代理机构 |
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代理人 |
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地址 |
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