| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To efficiently evaluate a state of transferring a mask defect to a wafer, and dimension and DOF of a mask on the wafer with SMO applied. <P>SOLUTION: A photomask evaluation system 1 includes: an outline extraction processing unit 12 for extracting a photomask pattern outline on the basis of an image obtained by an image obtaining unit 11 by imaging the photomask by a scanning electron microscope 2; a lithography simulation unit 13 for performing an operation by lithography simulation on the basis of the photomask pattern outline extracted by the outline extraction processing unit 12; and a wafer CD calculation unit 14 for obtaining a state of transferring a photomask defect to the wafer on the basis of an operation result of the lithography simulation unit 13. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
