发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer. |
申请公布号 |
US2011027980(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20100904181 |
申请日期 |
2010.10.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZUKI YUKIE;ARAI YASUYUKI;MORIYA YOSHITAKA;IKEDA KAZUKO;TANADA YOSHIFUMI;TAKAHASHI SHUHEI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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