METHODS FOR IMPROVING THE QUALITY OF GROUP III-NITRIDE MATERIALS AND STRUCTURES PRODUCED BY THE METHODS

摘要

The invention provides methods which can be applied during the epitaxial growth of two or more layers of Group III-nitride semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects interact with a protective layer of a protective material to form amorphous complex regions capable of preventing the further propagation of defects and dislocations. The invention also includes semiconductor structures fabricated by these methods.