VERFAHREN ZUR HERSTELLUNG KRISTALLINER SILIZIUM-SO

摘要

The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising:—providing a crystalline silicon substrate having a front side and a back side;—forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution;—forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.