EVALUATION METHOD FOR MASK PATTERN, MASK PATTERN CORRECTION METHOD AND MASK PATTERN GENERATOR

摘要

PROBLEM TO BE SOLVED: To provide an evaluation method for mask pattern capable of evaluating accurately a proximity-effect by considering a change in the amount of flare deteriorating the dimension of the circuit pattern, a pattern correction method and a mask pattern generator.

SOLUTION: The method includes: a step of calculating a dot image distribution function scattered on a substrate to be exposed according to a characteristic of a mirror of a projection optical system in an exposure device; a step of calculating an intensity of flare light in optional evaluation pattern by convolving coverages of evaluation patterns arranged on a first mask and the dot image distribution function; a step of setting and equalizing intensity of flare light in which pattern arrangements of a plurality of evaluation patterns and the pattern region are calculated; a step of projecting a pattern in which a first mask is provided on the pattern based on the setting, on the substrate to be exposed; a step of measuring a characteristic of an aerial image; and a step of producing correction data for actual exposure pattern referring to the measured result.

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