DOPANT HOST AND PROCESS FOR PRODUCING THE DOPANT HOST

摘要

This invention provides a dopant host, which has high heat resistance and causes a large volatilization volume of B2O3, and a boron dope material for a semiconductor, which has a uniform quality of material can realize a stable amount of boron volatilization for each time of use and is inexpensive. The dopant host is characterized by comprising a laminate including a boron component volatilization layer having a composition comprising 20 to 50% by mole of SiO2, 30 to 60% by mole (exclusive of 30% by mole) of Al2O3, 10 to 40% by mole of B2O3, and 2 to 10% by mole of RO, wherein R represents an alkaline earth metal, or comprising 30 to 60% by mole of SiO2, 10 to 30% by mole of Al2O3, 15 to 50% by mole of B2O3, 2 to 10% by mole of RO, wherein R represents an alkaline earth metal, and a heat resistant layer comprising 8 to 30% by mole of SiO2, 50 to 85% by mole of Al2O3, 5 to 20% by mole of B2O3, and 0.5 to 7% by mole of RO, wherein R represents an alkaline earth metal. There is also provided a process for producing a boron dope material for a semiconductor, comprising the step of slurrying a starting material powder containing a boron-containing crystalline glass powder, the step of molding the slurry to prepare a green sheet, and the step of sintering the green sheet.