| 摘要 |
A method for forming a storage node of a semiconductor capacitor is provided to prevent the bridge between adjacent storage nodes and to improve the yield and the reliability by forming a nitride spacer at sidewalls alone of a storage node region using an anisotropic etching process. An insulating layer is formed on a semiconductor substrate(11) with a storage node contact plug. A storage node region is defined on the insulating layer. A spacer is formed at sidewalls alone of the storage node region. A storage node(33) for contacting the storage node contact plug is formed on the resultant structure. The spacer is made of a nitride layer.
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