| 摘要 |
A method for forming a contact hole of a semiconductor device is provided to expose completely a predetermined lower structure of a semiconductor substrate to the outside by removing polymers and oxide layers from a contact hole using dry and wet etching processes. A gate pattern or a bit line pattern are formed on a semiconductor substrate(10) with a predetermined lower structure. An oxide layer(18) with nanopore is formed on the entire surface of the resultant structure. A contact hole(24) is formed on the resultant structure by etching selectively the oxide layer using a contact mask. A polymer is removed from a bottom of the contact hole by performing a dry etching process using oxygen plasma and Ar plasma. Residues of the oxide layer are removed from the bottom of the contact hole by performing a wet etching process using a BOE(Buffered Oxide Etchant).
|
