| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a mass-producible and inexpensive high-dielectric gate insulating film in which dispersion in threshold voltages is small, and to provide an MIS type semiconductor device wherein the gate insulating film of a transistor in a semiconductor integrated circuit is configured with a stable high-dielectric insulating film, a leak current is small, and driving force is large. SOLUTION: The MIS type semiconductor device is configured by using a laminated gate insulating film obtained by laminating an aluminum oxide layer and a zirconium or hafnium silicon oxide layer. The zirconium or hafnium silicon oxide layer is formed on the conductive channel side. COPYRIGHT: (C)2011,JPO&INPIT
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