GERMANIUM N-MOSFET DEVICES AND PRODUCTION METHODS

摘要

An n-MOSFET device (11) has an n-type channel (2) between a substrate (1) and a gate structure (7, 8), the channel (2) being formed by a layer of n-doped germanium of a thickness such that the channel (2) is fully-depleted with no applied gate voltage whereby the device (11) is operative in accumulation mode. The germanium channel can be d-doped with n-dopant and can be formed with a d-doped buried layer (3) of n-dopant.