发明名称 |
Method for tightening VT distribution of 5 volt-only flash EEPROMS |
摘要 |
There is provided an improved method for tightening the distribution of control gate threshold voltages of erase cells in flash EEPROM devices. A relatively low positive voltage is applied to the source regions of the EEPROM devices during an entire erase cycle. The magnitude of a negative constant voltage applied to control gates of the EEPROM devices is lowered to a predetermined voltage level during the entire erase cycle so as to obtain a tighter threshold voltage distribution. The value of a load resistor coupled between the low positive voltage and source regions is reduced simultaneously to a predetermined value so as to compensate for the increased erase time caused by the lowering of the magnitude of the negative constant voltage. As a result, an improved threshold voltage VT distribution after erase is obtained without sacrificing any reduction in the erase speed.
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申请公布号 |
US5481494(A) |
申请公布日期 |
1996.01.02 |
申请号 |
US19940362346 |
申请日期 |
1994.12.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TANG, YUAN;CLEVELAND, LEE E. |
分类号 |
G11C16/16;G11C16/34;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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